TW015Z120C,S1F Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Part number：	TW015Z120C,S1F
Product classification：	Single FETs, MOSFETs
Manufacturer：	Toshiba Electronic Devices and Storage Corporation
Description：	G3 1200V SIC-MOSFET TO-247-4L 1
Encapsulation：
Packing：	Tube
Quantity：	98
RoHS status：	YES
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Part number：

TW015Z120C,S1F

Product classification：

Single FETs, MOSFETs

Manufacturer：

Toshiba Electronic Devices and Storage Corporation

Description：

G3 1200V SIC-MOSFET TO-247-4L 1

Encapsulation：

Packing：

Tube

Quantity：

RoHS status：

YES

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Power Dissipation (Max)	431W (Tc)
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)	18V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V

TYPE

DESCRIPTION

Mfr

Toshiba Electronic Devices and Storage Corporation

Series

Package

Tube

Product Status

ACTIVE

Package / Case

TO-247-4

Mounting Type

Through Hole

Operating Temperature

175°C

Technology

SiC (Silicon Carbide Junction Transistor)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Rds On (Max) @ Id, Vgs

21mOhm @ 50A, 18V

Power Dissipation (Max)

431W (Tc)

Vgs(th) (Max) @ Id

5V @ 11.7mA

Supplier Device Package

TO-247-4L(X)

Drive Voltage (Max Rds On, Min Rds On)

18V

Vgs (Max)

+25V, -10V

Drain to Source Voltage (Vdss)

1200 V

Gate Charge (Qg) (Max) @ Vgs

158 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds

6000 pF @ 800 V