TK4A80E,S4X Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Part number：	TK4A80E,S4X
Product classification：	Single FETs, MOSFETs
Manufacturer：	Toshiba Electronic Devices and Storage Corporation
Description：	PB-FPOWERMOSFETTRANSISTORTO-220S
Encapsulation：
Packing：	Tube
Quantity：	40
RoHS status：	YES
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Part number：

TK4A80E,S4X

Product classification：

Single FETs, MOSFETs

Manufacturer：

Toshiba Electronic Devices and Storage Corporation

Description：

PB-FPOWERMOSFETTRANSISTORTO-220S

Encapsulation：

Packing：

Tube

Quantity：

RoHS status：

YES

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Operating Temperature	150°C
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2A, 10V
Power Dissipation (Max)	35W (Tc)
Vgs(th) (Max) @ Id	4V @ 400µA
Supplier Device Package	TO-220SIS
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	800 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 25 V

TYPE

DESCRIPTION

Mfr

Toshiba Electronic Devices and Storage Corporation

Series

Package

Tube

Product Status

ACTIVE

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Operating Temperature

150°C

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Rds On (Max) @ Id, Vgs

3.5Ohm @ 2A, 10V

Power Dissipation (Max)

35W (Tc)

Vgs(th) (Max) @ Id

4V @ 400µA

Supplier Device Package

TO-220SIS

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800 V

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

650 pF @ 25 V